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absolute maximum ratings parameter units i d @v gs = 4.5v,t c = 25c continuous drain current 56* i d @v gs = 4.5v,t c = 100c continuous drain current 56* i dm pulsed drain current 224 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 402 mj i ar avalanche current 56 a e ar repetitive avalanche energy 25 mj dv/dt peak diode recovery dv/dt 6.9 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation c a radiation hardened irhlna77064 logic level power mosfet surface mount (smd-2) www.irf.com 1 60v, n-channel technology product summary part number radiation level r ds(on) i d irhlna77064 100k rads (si) 0.012 ? 56a* IRHLNA73064 300k rads (si) 0.012 ? 56a* for footnotes refer to the last page smd-2 features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers.
pd-97177a
irhlna77064 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 56* i sm pulse source current (body diode) ? ? 224 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 56a, v gs = 0v t rr reverse recovery time ? ? 214 ns t j = 25c, i f =56a, di/dt 100a/ s q rr reverse recovery charge ? ? 1.16 cv dd 30v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.07 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.012 ? v gs = 4.5v, i d = 56a resistance v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -6.6 ? mv/c g fs forward transconductance 32 ? ? s v ds = 10v, i ds = 56a i dss zero gate voltage drain current ? ? 1.0 v ds = 48v ,v gs =0v ??10 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 v gs = -10v q g total gate charge ? ? 151 v gs = 4.5v, i d = 56a q gs gate-to-source charge ? ? 30 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 70 t d (on) turn-on delay time ? ? 51 v dd = 30v, i d = 56a, t r rise time ? ? 170 v gs = 4.5v, r g = 2.35 ? t d (off) turn-off delay time ? ? 110 t f fall time ? ? 17 l s + l d total inductance ? 4.0 ? ciss input capacitance ? 10220 ? v gs = 0v, v ds = 25v c oss output capacitance ? 2343 ? p f f = 100khz c rss reverse transfer capacitance ? 40 ? na nh ns a measured from the center of drain pad to center of source pad
thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.5 r thj-pcb junction-to-pc board ? 1.6 ?

c/w r g gate resistance 0.56 ? f = 1.0mhz, open drain
www.irf.com 3 pre-irradiation irhlna77064 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. single event effect, safe operating area for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 10v i gss gate-to-source leakage reverse ? -100 v gs = -10v i dss zero gate voltage drain current ? 10 a v ds = 48v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.01 ? v gs = 4.5v, i d = 56a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 56a resistance (smd-2) ? 0.012 ? v gs = 4.5v, i d = 56a 1. part numbers irhlna77064, IRHLNA73064 table 2. sin g le event effect safe operatin g area ion let ener gy ran g evds (v) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -3v -4v -5v -6v -7v -8v -9v -10v br 37 305 39 60 60 50 45 4030252015 i 60 370 34 60 60 60 60 30 20 10 10 - au 84 390 30 60 60 60 50 25 - - - 0 20 40 60 80 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 vgs vds br i au
irhlna77064 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 56a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 5.5v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.5v 2.5v
www.irf.com 5 pre-irradiation irhlna77064 fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 56a t j = 25c t j = 150c 0 20 40 60 80 100 i d , drain current (a) 6 7 8 9 10 11 12 13 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c vgs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 65 75 85 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma
irhlna77064 pre-irradiation 6 www.irf.com typical source-to-drain diode forward voltage
typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage maximum drain current vs. case temperature t c , case temperature (c) 0 30 60 90 120 150 180 210 240 270 300 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 56a for test circuit see figure 16 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 100 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 0 20 40 60 80 100 120 i , drain current (a) d limited by package
www.irf.com 7 pre-irradiation irhlna77064 fig 15a. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 25a 35.4a bottom 56a fig 13. maximum effective transient thermal impedance, junction-to-case 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
irhlna77064 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16b. gate charge test circuit fig 16a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 15b. unclamped inductive test circuit fig 15c. unclamped inductive waveforms t p v (br)dss i as fig 17a. switching time test circuit fig 17b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + -
www.irf.com 9 pre-irradiation irhlna77064 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.26mh peak i l = 56a, v gs = 10v i sd 56a, di/dt 350a/ s, v dd 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2007 case outline and dimensions ? smd-2

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